The high density and low power architecture RHEA for SpRAM is now available in the eFlash process variant for the 90 nm and 55 nm nodes.
This SpRAM is designed to reach the highest density and gains from 10 to 20% versus alternative solutions in 90 nm and 55 nm.
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Dolphin Integration’s RHEA SpRAM RHEA reaches such performances thanks to the data retention mode, which supports a voltage as low as 0.77 V at 55 nm and 90 nm. This minimum voltage retention feature enables to divide leakage by 4 compared to alternative memory generators in stand-by mode.
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The SpRAM RHEA is part of a complete library portfolio covering
- at 55 nm eF: ultra high-density 6-track standard cells and their kit for islet construction, generators for Dual Port SRAM, via programmable ROM and regulators.
- at 90 nm eF: ultra high-density 6-track standard cells (1.2V +/-10%) and ultra low leakage standard cells (from 1.2V to 3.3V +/-10%) with their kit for islet construction, generators for Dual Port SRAM, one port and two port register file, via programmable ROM and linear regulators.
This panoply for eFlash process is completed by a unique cache controller, which allows to upgrade to 3 times faster and 3 times lesser power consumption compared to a stand alone eFlash memory.